Effects of nitrogen partial pressure on the structural and electrical properties of Ti-W-N thin films
Abstract
Titanium tungsten nitride films on Si (100) were grown by dual unbalanced magnetron sputtering with pure Ti and W target under argon/nitrogen atmosphere. The nitrogen partial pressure was varied from 0 to 9% of total gas in the vacuum chamber while the magnetron current of Ti and W was kept constant, 0.6 A and 0.1 A respectively. The results showed that the nitrogen partial pressure strongly affected on composition, crystal structure and sheet resistance. The sheet resistance of Ti-W-N films tended to increase with addition nitrogen partial pressure from 5.3 to 11.0 W/square. Energy dispersive x-ray analysis (EDX) showed that the nitrogen partial pressure improved nitrogen concentration in films. The nitrogen concentration value 19 at. % when the nitrogen partial pressure was 9% of total gas. FCC NaCl phase, probably solid solution TixWYNZ was presented in the films with a nitrogen concentration between 10 at.% to 19 at.%.
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