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Preparation and Characterization of Titanium Chromium Nitride Thin Film Deposited by Reactive DC Magnetron Co-Sputtering Method | Buranawong | งดใช้ระบบ 3-31 กค 66 Burapha Science Journal

Preparation and Characterization of Titanium Chromium Nitride Thin Film Deposited by Reactive DC Magnetron Co-Sputtering Method

Adisorn Buranawong, Wanlapaporn Phimjong, Siriwat Alaksanasuwan, Nirun Witit-Anun

Abstract


Titanium Chromium Nitride (TiCrN) thin films were deposited on Si substrate by reactive DC magnetron
co-sputtering method in this research to study the effect of N2 gas flow rates on the crystal structure, microstructure, thickness and elemental composition. The films were characterized by XRD, FE-SEM and EDS techniques, respectively. The results showed that TiCrN structure of the films was obtained. The crystal structure of the as–deposited films was varied with N2 gas flow rates. The crystal size and lattice constant were in the range of 11.35 - 22.35 nm and 4.133 – 4.197 Å, respectively. The columnar structure was investigated from the
cross-section analysis. Moreover, the microstructure, thickness and elemental compositions of the as-deposited films were stilled changed with the N2 gas flow rates.

 

Keywords :  thin film, TiCrN, N2 gas flow rates, reactive co-sputtering


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References


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