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Effect of oxygen partial pressure and annealing temperature on the properties of SnO2 films | Homhuan | งดใช้ระบบ 3-31 กค 66 Burapha Science Journal

Effect of oxygen partial pressure and annealing temperature on the properties of SnO2 films

Pattira Homhuan, Jiraporn Pongsopa, Kanchaya Honglertkongsakul

Abstract


SnO2 films with different oxygen partial pressure were prepared on glass and Si (100) substrates by d.c. reactive magnetron sputtering with pure Sn. The effect of oxygen partial pressure on the structural properties, opitical preperties and surface morphology were investigated by x-ray diffraction, energy dispersive x-ray (EDX), visible-near IR spectroscopy and atomic force microscopy. The results  revealed formation of tetrahedral tin dioxide phase. Optical transparency of film with the average at 80% at visible wavelength was obtained and it had been increased by increasing the oxygen content in deposition process and almost constant at higher oxygen partial pressure. The films were treated with post- annealing under atmospheric pressure at  various temperature (400, 600 and 800 C°) for a one hour  period. The film structure was stable after annealing. The elemental composition almost unchanged after post-annealing temperature. Our results indicated that sample treated at 600 C°post-annealing temperature had the highest optical band gap and the lowest Urbach enery.


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