Effect of Discharge Power and Pressure on Deposition Rate of Metallic Films in DC Magnetron Sputtering System

Korn Promsakha na sakonnakorn, Phitsanu Poolcharuansin

Abstract


The effect of discharge power and pressure on deposition rate of Cu, Al, and Ti films in dc magnetron sputtering has been investigated using the quartz crystal microbalance technique. The investigated range of the discharge power is 10-200 W, while the argon pressure is in the range of 5-30 mTorr. The measurements show that the deposition rate of Cu is higher than that of Al and Ti. Furthermore, the deposition rate tends to increase with discharge power but decreases with argon pressure. In order to interpret the results, a mathematical model has been proposed taking into account sputtering at the target surface and collisions in a gas phase. The calculations using the model agree well with the measurements. It is found that the sputtering yield of the target as well as the flux and energy of the sputtering particles are crucial to determine the deposition rate. Furthermore, the decrease of deposition rate as the pressure increases can be explained in terms of collisions between sputtered and gas particles.

 

Keywords :  deposition rate, metallic films, dc magnetron sputtering


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